A new vibrational infrared absorption band at about 485cm - 1 appeared commonly in spectra of czochralski - grown and float - zone - grown silicon irradiated with fast neutron 在辐照硅中，实验发现了一个新的红外吸收峰，其波数为485cm ~ ( - 1 ) 。
2.
The new vibrational infrared absorption band was assigned to local vibrational modes related to the complicated complex of irradiation defects that did not contain oxygen atoms 该峰只与辐照有关，对应复杂辐照缺陷， 400退火可以基本消除。
3.
The new vibrational infrared absorption band at about 485cm - 1 was annealed at about 400 . it was difficult to annealing v - o complex in fast neutron irradiated si under 600 for 1h 同时快中子辐照后硅中产生v - o复合体等缺陷，在低于600 、 1小时的退火也难以消除，表明快中子辐照直拉硅中的氧相关缺陷更加复杂。
